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Silicon Bilateral Switch (SBS)
Click on the Part Number for Pricing.
Click on the for Detailed Acrobat PDF Specifications.
NTE Type Number |
Case Style |
Maximum Ratings |
Peak Recurrent Forward Current (Amps) |
DC Forward Anode Current (mA) |
Power Dissipation (mW) |
Switching Voltage (Volts) |
Switching Current (µA) |
Holding Current (mA) |
Off-State Current @ 5V (µA) |
On-State Forward Voltage Drop IF
= 175mA (Volts) |
|
|
IFp |
IF |
PD |
VS |
IS |
IH |
IB |
VF |
NTE6403
|
TO92 / TO98 |
1 |
175 |
300 |
6 Min to 10 Max |
500 |
1.5 |
1 |
1.7 |
DESCRIPTION: Silicon Bilateral Switches are
specifically designed and characterized for applications where stability
of switching voltage over a wide temperature range and well matched
bilateral characteristics are an asset. They are ideally suited for half
wave and full wave triggering in low voltage SCR and TRIAC phase control
circuits. |
Silicon Unilateral Switch (SUS)
NTE Type Number |
Case Style |
Switching Forward Voltage (Volts) |
Forward Current (µA) |
Holding Current (mA) |
Power Dissipation (mW) |
DC Forward Anode Current (mA) |
Peak Recurrent Forward Current (Amps) |
Forward Voltage Drop @ IF (mW) |
Switching Speeds (µs) |
Turn-On |
Turn-Off |
|
|
VS |
IS |
IH |
PD |
IF |
IF(Peak) |
VF |
ton |
toff |
NTE6404
|
TO98 |
Min |
Max |
200 |
0.75 |
300 |
175 |
1 |
1.5 |
1 |
25 |
7 |
9 |
DESCRIPTION: The NTE6404 is a silicon planer,
monolithic integrated circuit having thyristor electrical characteristics
closely approximating those of an "ideal" four layer diode. This device is
designed to switch at 8V with a 0.02%/°C temperature coefficient. A gated
lead is provided to eliminate rate effect, obtaining triggering at lower
voltages and to obtain transient free wave forms.
Silicon Unilateral Switches are specifically designed and characterized
for use in monostable and bistable applications where low cost is of prime
importance. |
Silicon Controlled Switch (SCS)
NTE Type Number |
Case Style |
Polarity |
Maximum Ratings |
DC Current Gain @ VCB =
0, IE = 1mA |
Collector to
Base Breakdown Voltage (Volts) |
Emitter to
Base Breakdown Voltage (Volts) |
Collector to
Emitter Breakdown Voltage RBE =
10k (Volts) |
Emitter Current (mA) |
Collector Current (mA) |
Peak Emitter Current (mA) |
Holding Current (mA) |
Power Dissipation (mW) |
|
|
|
V(BR)CBO |
V(BR)EBO |
V(BR)CER |
IE |
IC |
IEM |
IH |
PD |
hFE |
NTE239
|
TO72 |
PNP |
-70 |
-70 |
-70 |
100 |
50 |
500 |
1 |
250 |
0.72 to 2.5 |
NPN |
70 |
5 |
70 |
-100 |
-500 |
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