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NTE Type Number	Case Style	Maximum Ratings
		Peak Recurrent Forward Current (Amps)	DC Forward Anode Current (mA)	Power Dissipation (mW)	Switching Voltage (Volts)	Switching Current (µA)	Holding Current (mA)	Off-State Current @ 5V (µA)	On-State Forward Voltage Drop IF = 175mA (Volts)
		IFp	IF	PD	VS	IS	IH	IB	VF
NTE6403	TO92 / TO98	1	175	300	6 Min to 10 Max	500	1.5	1	1.7

DESCRIPTION: Silicon Bilateral Switches are specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits.

Silicon Unilateral Switch (SUS)

NTE Type Number	Case Style	Switching Forward Voltage (Volts)		Forward Current (µA)	Holding Current (mA)	Power Dissipation (mW)	DC Forward Anode Current (mA)	Peak Recurrent Forward Current (Amps)	Forward Voltage Drop @ IF (mW)	Switching Speeds (µs)
										Turn-On	Turn-Off
		VS		IS	IH	PD	IF	IF(Peak)	VF	ton	toff
NTE6404	TO98	Min	Max	200	0.75	300	175	1	1.5	1	25
		7	9

DESCRIPTION: The NTE6404 is a silicon planer, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. This device is designed to switch at 8V with a 0.02%/°C temperature coefficient. A gated lead is provided to eliminate rate effect, obtaining triggering at lower voltages and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance.

Silicon Controlled Switch (SCS)

NTE Type Number	Case Style	Polarity	Maximum Ratings								DC Current Gain @ VCB = 0, IE = 1mA
			Collector to Base Breakdown Voltage (Volts)	Emitter to Base Breakdown Voltage (Volts)	Collector to Emitter Breakdown Voltage RBE = 10k (Volts)	Emitter Current (mA)	Collector Current (mA)	Peak Emitter Current (mA)	Holding Current (mA)	Power Dissipation (mW)
			V(BR)CBO	V(BR)EBO	V(BR)CER	IE	IC	IEM	IH	PD	hFE
NTE239	TO72	PNP	-70	-70	-70	100	50	500	1	250	0.72 to 2.5
		NPN	70	5	70	-100		-500