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Silicon Unijunction Transistors (UJT)
Click on the Part Number for Pricing.
Click on the  for Detailed Acrobat PDF Specifications.
NTE Type
Number |
Case Style |
Maximum Ratings |
Intrinsic
Stand Off
Ratio
(pF) |
Interbase
Resistance
(k Ohms) |
Valley
Point
Current
(mA) |
RMS
Emitter
Current
(mA) |
Interbase
Voltage
(Volts) |
RMS Power
Dissipation
(mW) |
Emitter
Reverse
Current
(µA) |
|
|
IE |
VBB |
PD |
IEO |
|
|
RBBO |
IV |
| NTE6400
|
TO39 |
50 |
35 |
450 |
12 |
Min |
Max |
Min |
Max |
8 Min |
| 0.45 |
0.80 |
4 |
12 |
| NTE6400A
|
TO39 |
50 |
55 |
450 |
1 |
0.54 |
0.67 |
4 |
12 |
8 Min |
| NTE6401
|
TO18 |
50 |
35 |
300 |
12 |
0.56 |
0.75 |
4.7 |
9.1 |
4 Min |
| NTE6409 |
TO18 |
50 |
35 |
300 |
0.2 |
0.68 |
0.82 |
4.7 |
9.1 |
8 Min |
| NTE6410
|
TO92 |
50 |
35 |
300 |
0.005 Typ |
0.70 |
0.85 |
4 |
9.1 |
4 Min |
Programmable Unijunction Transistor
(PUT)
NTE Type
Number |
Case Style |
Maximum Ratings |
Gate
Current
(mA) |
Peak
Current
@ VS = 10V
(µA) |
Offset
Voltage
@ VS = 10V
(Volts) |
Minimum
Valley Voltage
@ VS = 10V
(µA) |
Gate to
Cathode
Forward
Voltage
(Volts) |
Gate to
Cathode
Reverse
Voltage
(Volts) |
Anode to
Cathode
Voltage
(Volts) |
Power
Dissipation
(mW) |
|
|
BVGKF |
BVGKR |
BVAK |
PD |
IG |
IP |
VT |
IV |
| NTE6402
|
TO98/TO92 |
+40 |
-5 |
±40 |
300 |
±20 |
2 @ RS = 1M Ohm |
1.6 @ Rg = 1M Ohm |
70 @ Rg = 1M Ohm |
| 5 @ RS = 10k Ohm |
0.6 @ Rg = 10k Ohm |
1.5mA @ Rg = 10k
Ohm |
DESCRIPTION:
This device has been
characterized as a Programmable Unijunction Transistor (PUT), offering
many advantages over conventional unijunction transistors. The designer
can select R1 and R2 to program unijunction
characteristics such as intrinsic standoff ratio, interbase resistance,
and valley point current to meet particular needs. Applications of the PUT
include timers, high gain phase control circuits, and relaxation
oscillators. |
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