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Silicon Unijunction Transistors (UJT)
Click on the Part Number for Pricing.
Click on the for Detailed Acrobat PDF Specifications.
NTE Type Number |
Case Style |
Maximum Ratings |
Intrinsic Stand Off Ratio (pF) |
Interbase Resistance (k Ohms) |
Valley Point Current (mA) |
RMS Emitter Current (mA) |
Interbase Voltage (Volts) |
RMS Power Dissipation (mW) |
Emitter Reverse Current (µA) |
|
|
IE |
VBB |
PD |
IEO |
|
|
RBBO |
IV |
NTE6400
|
TO39 |
50 |
35 |
450 |
12 |
Min |
Max |
Min |
Max |
8 Min |
0.45 |
0.80 |
4 |
12 |
NTE6400A
|
TO39 |
50 |
55 |
450 |
1 |
0.54 |
0.67 |
4 |
12 |
8 Min |
NTE6401
|
TO18 |
50 |
35 |
300 |
12 |
0.56 |
0.75 |
4.7 |
9.1 |
4 Min |
NTE6409 |
TO18 |
50 |
35 |
300 |
0.2 |
0.68 |
0.82 |
4.7 |
9.1 |
8 Min |
NTE6410
|
TO92 |
50 |
35 |
300 |
0.005 Typ |
0.70 |
0.85 |
4 |
9.1 |
4 Min |
Programmable Unijunction Transistor
(PUT)
NTE Type Number |
Case Style |
Maximum Ratings |
Gate Current (mA) |
Peak Current @ VS = 10V (µA) |
Offset Voltage @ VS = 10V (Volts) |
Minimum Valley Voltage @ VS = 10V (µA) |
Gate to Cathode Forward Voltage (Volts) |
Gate to Cathode Reverse Voltage (Volts) |
Anode to Cathode Voltage (Volts) |
Power Dissipation (mW) |
|
|
BVGKF |
BVGKR |
BVAK |
PD |
IG |
IP |
VT |
IV |
NTE6402
|
TO98/TO92 |
+40 |
-5 |
±40 |
300 |
±20 |
2 @ RS = 1M Ohm |
1.6 @ Rg = 1M Ohm |
70 @ Rg = 1M Ohm |
5 @ RS = 10k Ohm |
0.6 @ Rg = 10k Ohm |
1.5mA @ Rg = 10k
Ohm |
DESCRIPTION: This device has been
characterized as a Programmable Unijunction Transistor (PUT), offering
many advantages over conventional unijunction transistors. The designer
can select R1 and R2 to program unijunction
characteristics such as intrinsic standoff ratio, interbase resistance,
and valley point current to meet particular needs. Applications of the PUT
include timers, high gain phase control circuits, and relaxation
oscillators. |
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