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Silicon Bilateral Switch (SBS)
Click on the Part Number for Pricing.
Click on the  for Detailed Acrobat PDF Specifications.
NTE Type
Number |
Case Style |
Maximum Ratings |
Peak
Recurrent
Forward
Current
(Amps) |
DC Forward
Anode
Current
(mA) |
Power
Dissipation
(mW) |
Switching
Voltage
(Volts) |
Switching
Current
(µA) |
Holding
Current
(mA) |
Off-State
Current
@ 5V
(µA) |
On-State
Forward
Voltage Drop
IF
= 175mA
(Volts) |
|
|
IFp |
IF |
PD |
VS |
IS |
IH |
IB |
VF |
| NTE6403
|
TO92 / TO98 |
1 |
175 |
300 |
6 Min to 10 Max |
500 |
1.5 |
1 |
1.7 |
DESCRIPTION:
Silicon Bilateral Switches are
specifically designed and characterized for applications where stability
of switching voltage over a wide temperature range and well matched
bilateral characteristics are an asset. They are ideally suited for half
wave and full wave triggering in low voltage SCR and TRIAC phase control
circuits. |
Silicon Unilateral Switch (SUS)
NTE Type
Number |
Case Style |
Switching
Forward
Voltage
(Volts) |
Forward
Current
(µA) |
Holding
Current
(mA) |
Power
Dissipation
(mW) |
DC Forward
Anode
Current
(mA) |
Peak
Recurrent
Forward
Current
(Amps) |
Forward
Voltage
Drop @ IF
(mW) |
Switching Speeds (µs) |
| Turn-On |
Turn-Off |
|
|
VS |
IS |
IH |
PD |
IF |
IF(Peak) |
VF |
ton |
toff |
| NTE6404
|
TO98 |
Min |
Max |
200 |
0.75 |
300 |
175 |
1 |
1.5 |
1 |
25 |
| 7 |
9 |
DESCRIPTION:
The NTE6404 is a silicon planer,
monolithic integrated circuit having thyristor electrical characteristics
closely approximating those of an "ideal" four layer diode. This device is
designed to switch at 8V with a 0.02%/°C temperature coefficient. A gated
lead is provided to eliminate rate effect, obtaining triggering at lower
voltages and to obtain transient free wave forms.
Silicon Unilateral Switches are specifically designed and characterized
for use in monostable and bistable applications where low cost is of prime
importance. |
Silicon Controlled Switch (SCS)
NTE Type
Number |
Case Style |
Polarity |
Maximum Ratings |
DC
Current
Gain
@ VCB =
0,
IE = 1mA |
Collector
to
Base
Breakdown
Voltage
(Volts) |
Emitter
to
Base
Breakdown
Voltage
(Volts) |
Collector
to
Emitter
Breakdown
Voltage
RBE =
10k
(Volts) |
Emitter
Current
(mA) |
Collector
Current
(mA) |
Peak
Emitter
Current
(mA) |
Holding
Current
(mA) |
Power
Dissipation
(mW) |
|
|
|
V(BR)CBO |
V(BR)EBO |
V(BR)CER |
IE |
IC |
IEM |
IH |
PD |
hFE |
| NTE239
|
TO72 |
PNP |
-70 |
-70 |
-70 |
100 |
50 |
500 |
1 |
250 |
0.72 to 2.5 |
| NPN |
70 |
5 |
70 |
-100 |
-500 |
|
|
|
|
|
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