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NTE Type Number	Description and Application	Case Style	Collector to Emitter Breakdown Voltage (Volts)	Gate to Emitter Cutoff Voltage (Volts)	Gate to Emitter Breakdown Voltage (Volts)	Maximum Collector Current (Amps)	Collector to Emitter Saturation Voltage (Volts)	Input Capacitance (pf)	Device Total Power Dissipation @ TC= +25°C (Watts)
			V(BR)CES	VGE(Off)	BVGES	IC	VCE(sat)	Cies	PD
NTE3300	N-CHANNEL Enhancement Mode High Speed Switch	TO220 Full Pack	400 Min	7 Max	±25 Max	10	8.0 Max	1350 Typ	30 Max
			tr = 0.50µs, ton = 0.50µs, tf = 6µs, toff = 7µs
NTE3301	N-CHANNEL Enhancement Mode High Speed Switch	TO220 Full Pack	400 Min	7 Max	±25 Max	15	8.0 Max	2000 Typ	40 Max
			tr = 0.50µs, ton = 0.50µs, tf = 6µs, toff = 7µs
NTE3302	N-CHANNEL Enhancement Mode High Speed Switch	TO220 Full Pack	600 Min	6 Max	±20 Max	8	4.0 Max	650 Typ	30 Max
			tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
NTE3303	N-CHANNEL Enhancement Mode High Speed Switch	TO220 Full Pack	600 Min	6 Max	±20 Max	15	4.0 Max	1100 Typ	35 Max
			tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
NTE3310	N-CHANNEL Enhancement Mode High Speed Switch	TO3P	600 Min	6 Max	±20 Max	15	4.0 Max	1100 Typ	100 Max
			tr = 0.60µs, ton = 0.80µs, tf = 0.35µs, toff = 1µs
NTE3311	N-CHANNEL Enhancement Mode High Speed Switch	TO3P	600 Min	6 Max	±20 Max	25	4.0 Max	1400 Typ	150 Max
			tr = 0.30µs, ton = 0.40µs, tf = 0.15µs, toff = 0.50µs
NTE3312	N-CHANNEL Enhancement Mode High Speed Switch	TO3P	1200 Min	6 Max	±20 Max	8	4.0 Max	1150 Typ	100 Max
			tr = 0.30µs, ton = 0.40µs, tf = 0.25µs, toff = 0.80µs
NTE3320	N-CHANNEL Enhancement Mode High Speed Switch	-	600 Min	6 Max	±20 Max	50	4.0 Max	3500 Typ	200 Max
			tr = 0.30µs, ton = 0.40µs, tf = 0.15µs, toff = 0.50µs
NTE3321	N-CHANNEL Enhancement Mode High Speed Switch	-	600 Min	6 Max	±20 Max	80	3.5 Max	5500 Typ	200 Max
			tr = 0.30µs, ton = 0.50µs, tf = 0.25µs, toff = 0.70µs
NTE3322	N-CHANNEL Enhancement Mode High Speed Switch	-	900 Min	6 Max	±25 Max	60	3.7 Max	5300 Typ	200 Max
			tr = 0.25µs, ton = 0.35µs, tf = 0.25µs, toff = 0.50µs
NTE3323	N-CHANNEL Enhancement Mode High Speed Switch	-	1200 Min	6 Max	±20 Max	25	4.0 Max	3200 Typ	200 Max
			tr = 0.30µs, ton = 0.40µs, tf = 0.25µs, toff = 0.80µs

DESCRIPTION
NTE's series of Insulated Gate Bipolar Transistors (IGBTs) combine the high input impedance and high speed characteristics of MOSFETs and the high conduction (low saturation voltage) characteristics of bipolar transistors. Their structure looks very much like a MOSFET except that MOSFETs use an N+ - N- type substrate whereas IGBTs use a P+ - N- type substrate.

The thyristor fromed by PNP - NPN transistor coupling has its base and emitter shorted by aluminum patterning to disable it from operating and is therefore considered irrelevant to the basic operation of IGBTs. Consequently, the equivalent circuit and basic operating mechanism of IGBTs are the same as those of a MOS-input inverted Darlington transistor comprised of an N-channel enhancement MOSFET in its input stage and a PNP transistor on the output stage.

IGBTs are constructed in such a way that first, the gate voltage is applied to form a channel and then the base current of the PNP transistor is supplied, letting the circuit turn on eventually as an IGBT. Conversely, when turned off, the channel is eliminated to turn off the base current. Thus, IGBTs are driven in exactly the same way as MOSFETs, and IGBTs have high input impedance characteristics just like MOSFETs.