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NTE Type No.	Output Transistor Configuration	Maximum Emitter Specifications			Maximum Detector Specifications			Total Power Dissipation (mW)	Typical Switching Speeds
		Reverse Breakdown Voltage (Volts)	Forward Current (mA)	Forward Voltage Drop (Volts)	Collector Emitter Voltage (Volts)	Collector Current (mA)	Collector Dark Current (nA)		Turn-On Time (µs)	Turn-Off Time (µs)
		V(BR)R	IF	VF @ IF	VCEO	IC	ICEO	PD	ton	toff
NTE3100	NPN Transistor	6	60	1.7	55	100	100	250	8	50
NTE3101	NPN Darlington	6	60	1.7	55	100	100	250	7	45
NTE3102	NPN Transistor	6	60	1.7	55	100	100	250	8	50
NTE3103	NPN Darlington	6	60	1.7	55	100	100	250	7	45
NTE3104	NPN Transistor	3	50	1.2	30	20	200	75	15	15
NTE3105	NPN Transistor	3	50	1.3	30	20	200	75	20	20

Note:  All units feature 1mm aperture. All NTE Photon Coupled Interrupter Modules are manufactured using a gallium arsenide emitting diode coupled to a silicon phototransistor or darlington. The gap in the housing provides a means of interrupting the signal with an opaque material thereby switching the output from "ON" into an "OFF" state.