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(VOLTAGE COMPENSATING DIODES)
NTE Type
Number
Material Forward Voltage Drop (Volts) Maximum Ratings
Forward
DC Current
(mA)
Surge Current
for 10msec
(Amps)
Reverse Characteristics
@ 100V
(mA)
VF IF IFSM IR
Min Typ Max @ IF mA
NTE606 Silicon 1.60
2.05
1.80
2.30
2.00
2.55
1
70
150 27 10
NTE607 Silicon 2.10
2.70
2.35
3.00
2.60
3.30
1
70
100 25 10
Tstg: -40°C to +130°C, Top: -25°C to +70°C

(TEMPERATURE COMPENSATING DIODES)
NTE Type
Number
Material Case Style Maximum
Forward Current
(mA)
Forward Voltage Drop
IF VF (Volts) VF (mV/°C)
Min Max @ IF mA
NTE600 Silicon DO7 10 0.63 0.69 3 2.0
NTE601 Silicon - 20 0.56 0.61 1.5 1.8
NTE605A Silicon DO35 100 1.26 1.36 3 4.6


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